Cutting-edge Process Technology

Next Generation Device Technology

Smart Sensor Chip

Research description

RD platform for next generation device technology

Research focuses

- High density and HP/LP device technologies
  • Vertical stacked fin/nanowire/nanosheet transistors
  • Ultrathin gate dielectrics and ferroelectrics
  • IV and III-V group channel materials
  • Two-dimensional channel materials
- Si-based quantum computing device technologies

Research results

High density and HP/LP 3D stacked device technologies that meet the requirements of academic and industrial applications.

Providing a R&D platform that is up to the industrial standard for domestic R&D teams.

Monolithic 3D+ IC Technology

Research description

Developing highly heterogeneous-integrated capability of the monolithic 3D+IC in the field of IoT and AI applications.

Research focuses

  • Low thermal-budget laser and thin film technology (400oC)
  • Technologies of stackable advanced FinFETs, memories and functional devices
  • Monolithic 3D integration in CMOS circuits and computing-in-memory (CIM)

Research results

Low thermal budget super-CMP-planarized visible laser-crystallized epi-like Si channel and CO2 far-infrared laser activation technologies enable highly heterogeneous-integrated TSV-free monolithic 3DIC platform to integrate stackable FinFETs, CMOS-circuits and low power-consumption memories for low cost, small footprint and fully functionalized 3D+ IoT chip.

Innovative Memory

Innovative Memory

Research description

Next generation high speed low power memory technology service platform

Research focuses

- Non-volatile memory device technology
  • High density resistive memory
  • High speed low power magnetic memory
  • 3D ferroelectric FinFET
  • High selectivity selective device
- Memory circuit integration technology
  • High speed memory read/write array circuit
  • Neuromorphic computing circuit
  • Spintronic computing in memory

Research results

Providing several innovation memory device and array circuit technologies for academic and research group studying on material investigation, proto-type verification and system integration development.

GaN Power Device Technology

GaN Power Device Platform

Research description

All GaN ICs for autonomous car power management component and high speed 5G communication

Research focuses

  • High power E-mode GaN technology
  • High efficiency All-GaN IC technology
  • GaN RF amplifier for beyond-5G communication
  • Power/RF device package & heat dissipation module

Research results

The 6/8-inch GaN power device process line has been constructed. The platform demonstrates 50A/650V power device and 12V power management circuit, respectively. In addition, 75 GHz power amplifier and high thermal conducting package technologies are also created for GaN power/RF device development.