第5屆奈米元件電路與技術研討會徵稿開始 SNDCT 2025 Call for Papers
國家實驗研究院台灣半導體研究中心將於2025年5月27日至28日，舉辦第五屆「奈米元件電路與技術研討會」 (The 5th Symposium on Nano-Device Circuits and Technologies, SNDCT 2025)。本活動邀請國內半導體相關領域之教授、研究人員，以及多家半導體產業指標廠商專家共同參與，探索【新興元件與運算技術】、【先進邏輯與記憶體技術】、【高頻、功率元件電路與化合物半導體技術】、【微機電、感測器與異質整合先進封裝技術】、【光電與矽光子技術】、【新穎材料檢測分析技術】等半導體元件、系統整合之前瞻研究，並衍伸至人工智慧、車用晶片、智慧製造、物聯網、高速通訊、量子電腦等重要應用領域，冀望透過產學互動，加速學術界與產業界之技術交流。
The 5th Symposium on Nano-Device Circuits and Technologies (SNDCT 2025) will be hosted by the Taiwan Semiconductor Research Institute, National Applied Research Laboratories, from May 27-28, 2025. The symposium aims to provide a platform for academia and industry in semiconductor-related fields to exchange ideas and experiences in advanced device fabrication and system integration, which are closely linked to the important applications such as artificial intelligence, vehicle electronics, smart manufacturing, internet of things, high-speed communication, and quantum computing. Experts in related fields are invited to discuss and explore the special focus sessions on “Emerging devices and computing technology”, “Advanced logic and memory technology”, “High frequency, power devices and circuits, and compound semiconductor technology”, “MEMS, sensors, advanced packaging, and heterogeneous integration”, “Optoelectronics and silicon photonics”, and “Novel materials characterization”.
●活動日期：2025年5月27日至2025年5月28日
Event date: May 27, 2025 to May 28, 2025.
●徵稿日期：即日起至2025年3月16日（展延至3月31日）
Call for Papers : From now till March 16, 2025 (Deadline March 31, 2025)
●徵稿主題：
Call for paper / Topics
1.新興元件與運算技術
Emerging Device and Computing Technology
Nano-device technology; process technology; high-mobility channel MOSFETs; high-k/metal gate materials; negative capacitance FET; TFT; device applications of low‐dimensional materials; qubit devices; quantum computing; reliability; device modeling and simulation
2.先進邏輯與記憶體技術
Advanced Logic and Memory Technology
Logic devices and circuits; embedded and standalone memory technology; conventional and emerging memories (SRAM, DRAM, Flash, ReRAM, MRAM, and ferroelectric memory…etc.); design/system technology co-optimization (DTCO/STCO); novel integration /circuit design schemes and architectures in artificial intelligence, internet of things, compute-in-memory, high-performance computing, low power, and low voltage applications
3.高頻、功率元件電路與化合物半導體技術
High Frequency, Power Devices and Circuits, and Compound Semiconductor Technology
Compound semiconductor materials and devices; high-electron mobility transistors (HEMTs); heterojunction bipolar transistors (HBTs); heterostructures; monolithic integration; E/D-mode; epitaxy technology; thermal management; power ICs; power device characterization, modeling, simulation and reliability; high-frequency devices and circuits; MMICs; RFICs; millimeter-wave, sub-THz, and THz integrated circuits; antenna theory, design and measurement; MIMO antennas; beamforming and multi-beam systems
4.微機電、感測器與異質整合先進封裝技術
MEMS, Sensors, Advanced Packaging, and Heterogeneous Integration
Microelectromechanical Systems (MEMS); Sensors; Heterogeneous Integration; Advanced Packaging; Wafer-Level Packaging; Fan-Out Packaging; 2.5D/3D Packaging; Silicon Interposer; Through-Silicon Via (TSV); Micro Bump; High-Density Interconnect (HDI); System-in-Package (SiP)
5.光電與矽光子技術
Optoelectronics and Silicon Photonics
Advanced in Photonic devices for high-speed photodetectors and modulators, and light sources; Photonic-electronic integration for optical interconnects; Metalens for augmented or virtual reality and holography; Quantum photonics for computation, sensing and encryption, Optical Sensing devices for single-photon sensitivity, Time-Of-Flight (ToF) and nonvisible image sensors, in-display sensors and imaging sensors; Imagers for high-speed and high-time resolution CMOS imagers, SPAD imagers, and CCD imagers; TFTs for photonics applications; Flexible, stretchable, and/or printed electronics; Light emitting devices, Perovskites or quantum dots optical devices; Semiconductor lasers
6.新穎材料檢測分析技術
Novel Materials Characterization
Scanning electron microscopy (SEM); Scanning probe microscopy (SPM); Transmission electron microscopy (TEM) with selected area diffraction pattern (SADP); X-ray diffraction (XRD); Auger electron spectrometer (AES); X-ray photoelectron spectroscopy (XPS); Secondary Ion Mass Spectroscopy (SIMS); Fourier-transform infrared spectroscopy (FTIR); Raman spectroscopy; atom probe tomography (APT); Nano-indentation, Spreading resistance profiling (SRP); Hall effect Measurement; Differential Hall Effect Metrology (DHEM); Device reliability; Hot carrier phenomena; Bias temperature instability; Charge trapping; Thermal effect; Flicker noise; RTN; Dielectric breakdown; Failure analysis; Electromigration; Device dynamic characterization; Parameter extraction method
●徵稿海報：下載
●投稿範本：下載
●主辦單位：國家實驗研究院台灣半導體研究中心
Organizer: Taiwan Semiconductor Research Institute (TSRI)
●活動地點：新竹市科學園區展業一路26號
Venue: No.26, Prosperity Road I, Hsinchu Science Park, Hsinchu 300091, Taiwan.
● 投稿/報名 ：https://cs.tsri.narl.org.tw/NDLCS/NDLSeminar/SeminarBulletin.aspx
Submission/Registration：https://cs.tsri.narl.org.tw/NDLCS/NDLSeminar/SeminarBulletin.aspx
競賽獎項 Awards
• 特優獎6 名(各領域取一名)：頒發獎狀乙紙，獎金新台幣15,000 元。
Platinum Award (1st place for each topic): Awarded certificates and NTD 15,000
• 優等獎6 名(各領域取一名)：頒發獎狀乙紙，獎金新台幣10,000 元。
Gold Award (one winner for each topic): Awarded certificates and NTD 10,000
• 佳作獎6 名(各領域取一名)：頒發獎狀乙紙，獎金新台幣5,000 元。
Silver Award (one winner for each topic): Awarded certificates and NTD 5,000
優良海報獎 Best Poster Awards
• 至少6 名(各領域至少取一名)：頒發獎狀乙紙，獎金新台幣5,000 元。
At least 6 winners in total (at least one winner for each topic): Awarded certificates and NTD 5,000.
評選說明 Review Guidelines
1. 學生論文獎：學生投稿完成後，主辦單位將依主題邀請專業人士進行評選，得獎名單會於5 月28 日頒獎典禮公布且頒獎。
Best Paper Award: After students submissions are completed, the committee will invite professionals to evaluate the entries based on their respective topics. The list of award recipients will be announced and awarded during the ceremony on May 28.
2. 優良海報獎：海報最遲須於5 月28 日早上9 點00 分前需張貼完畢於展示會場中，優良海報獎評審委員將於5 月28 日早上11:00-12:00 進行評鑑，參賽同學需在此時間於海報旁回答評審委員之提問。評審委員評分根據海報內容、格式、現場問答等方式進行評鑑，各投稿主題分別評分。為鼓勵提前參與，5 月 27日中午前完成海報張貼者，將致贈小禮物一份。
Best Poster Award: The posters must be fully displayed at the exhibition venue no later than 9:00 AM on May 28, and all of the presenter must remain by their poster board for the Q&A discussion during the Poster Review Session 11:00 AM – 12:00 AM on May 28. The evaluation of the Best Poster Award will be based on criteria such as poster content, format, and the participants’ responses.
Each submission category will be evaluated separately. To encourage early participation, the participants who complete their poster setup before May 27 noon will receive a small gift.
3. 學生論文獎與優良海報獎之參加身分: 目前在學之大學或碩博士學生。
Eligibility for Best Paper Awards and Best Poster Awards: Current undergraduate, master's, or doctoral students.
4. 作者群可含大學、碩博士學生、研究助理、博士後研究、研究員、指導教授或業界合作對象。
The authors may include undergraduate, master's, and doctoral students, research assistants, postdoctoral researchers, researchers, advisors, or industry collaborators.
5. 投稿者可不限篇數投稿，經大會同意接受者，始可參加學生論文獎評選及海報獎評選，且海報論文報告者須為大會之註冊人員。
There is no limit on the number of submissions per participant. Only submissions accepted by the SNDCT 2025 committee will be eligible for Best Paper Awards and Best Poster Awards evaluation. Additionally, the presenter of the poster must be a registered participant of the conference.
6. TSRI JDP 團隊需投稿，發表成果為申請TSRI JDP之必要指標。
The TSRI JDP team is required to submit a paper, as presenting research findings is a mandatory criterion for applying to the TSRI JDP program.
7. 請使用投稿模板撰寫繳交摘要2至4頁，以4頁為限，內容包含研究成果、表格、圖表與參考文獻。
Please use the designated submission template to prepare and submit an abstract of 2 to 4 pages, with a maximum of 4 pages. The content should include research findings, tables, figures, and references.
8. 檔案皆須以PDF格式上傳。請仔細檢查內容、特殊符號是否正確顯示。檔案內容不應超過 20MB。
All files must be uploaded in PDF format. Please carefully check the content and ensure that special characters are displayed correctly. The file size must not exceed 20MB.
9. 請使用線上投稿系統上傳摘要。
Please upload the abstract via the online submission system.
論文海報格式 Poster Format
海報展示板尺寸為寬100 cm，高200 cm，直式。海報內容的編排方式不限，中英文呈現不限，以容易閱讀且清楚展示為原則。最小字體建議為24 point ( 約0.9 cm 高)，標題建議為36 point ( 約 1.2 cm 高)，以方便讀者閱讀。海報最上端需註明「文章標題」、「作者」與「作者資訊」，並請附上聯絡方式，以供有疑問之讀者可直接與作者聯繫。
The poster board dimension is 200 cm in height and 100 cm in width, and is oriented vertically. The content of the poster may be presented in either Mandarin or English. Posters must be clear and easy to read. It is suggested to use 24-point font (~0.9 cm height) or larger, and the title is suggested to be written in 36-point font (~1.2 cm height), for ease of reading. The top of the posters should contain the article title, author´s name, information about the author, and the author's contact information for readers who wish to inquire.
注意事項 Notice
1. 主辦單位將於研討會5 月28 日中午12 點進行頒獎儀式，公佈學生論文獎及優良海報獎之得獎名單並進行頒獎，敬邀全體與會者參加頒獎典禮。
The Award Ceremony will take place at 12 pm on May 28. Meanwhile, Best Paper Awards and Best Poster Awards will be announced and granted to the winners by SNDCT 2025 committee. All SNDCT 2025 attendees are invited to attend the ceremony.
2. 學生論文獎公佈獎項時，得獎者本人需在現場，無則獎金取消，獎狀以郵寄方式寄至報名時指定地址。
The winners of Best Paper Awards should be in the ceremony when the award is announced. If the winner is absent, the scholarship will be canceled. The certificates of the award will be sent to the address on the registration system.
3. 優良海報獎得獎者，可由海報作者群中任一人代表領獎，需注意領獎人員需在現場且有註冊會議，無則獎金取消，
獎狀以郵寄方式寄至報名時指定地址。
The winners of the Best Poster Awards could designate one of the co-authors to accept the award. The recipient must register for SNDCT 2025 and be in the ceremony. If the winner is absent, the scholarship will be canceled, and the awarded certificates will be sent to the address on the registration system.
4. 活動結束後，如欲保留海報，敬請於5 月28 日 (三) 下午1:00 自行撤除完畢。逾時未拆者，將由本中心代為處理。
The posters should be removed before 1:00 pm on May 28 (Wednesday). TSRI will discard the display materials that not removed following the closing.
5. 榮獲本研討會論文競賽得獎者，需義務提供中文版本，並授權本中心可使用論文，刊登於本中心刊物，特此告知。各獎項將依照稅法規定進行申報。
Authors of accepted papers must transfer the copyright to TSRI and provide the article in Mandarin for publishing articles. The prize should be included in the tax declaration.
6. 若有任何未盡事宜，主辦單位保有隨時補充、說明、修改之權利。
The SNDCT 2025 committee keeps the right for adding remarks and modifing the description.