Contact
Welcome to use the business contacts provided by the Chip Implementation Service Division. For questions about process information/chip manufacturing/application for equipment use or technical consultation, please feel free to contact the person in charge listed below.
TEL：03-5773693 FAX：03-5679451
Email：hlyu@niar.org.tw
TEL：03-5773693 FAX：03-5679451
Application for Use of Process Information
For business contacts, please refer to the webpage of Process/SIP ApplicationChip Manufacturing Application
| Process Code | Process Name | Technical Contacts | Application Contacts |
|---|---|---|---|
| D35 Multi-option-MEMS | TSMC 0.35 um Mixed-Signal 2P4M Polycide 3.3/5V |
Mr. Lin. Ext. 7190 Email:pjlin@niar.org.tw ** Using Multi-option-MEMS post-processing： Ms. Lin. Ext. 7153 Email:jeanlin@niar.org.tw **Using Cell-Based Flow： Mr. Cheng. Ext. 7248 Email:shunwen.cheng@niar.org.tw |
|
| C18 | CIC 0.18 um 1.8V/3.3V 1P6M Virtual Mixed Mode / RF CMOS Process |
Mr. Peng. Ext. 7132 Email:kangchu@niar.org.tw |
None |
| T18 | TSMC 0.18 um CMOS Mixed Signal RF General Purpose Standard Process FSG Al 1P6M 1.8&3.3V |
Mr. Lin. Ext. 7190 Email:pjlin@niar.org.tw **Using Cell-Based Flow： Mr. Cheng. Ext. 7248 Email:shunwen.cheng@niar.org.tw |
|
| SiGe18 | TSMC 0.18 um BiCMOS Mixed Signal SiGe General Purpose Standard Process FSG Al 3P6M 1.8&3.3V |
Mr. Chen. Ext. 7201 Email:ycchen@niar.org.tw |
|
| P15 | WIN 0.15 um GaAs pHEMT Process |
Mr. Chen. Ext. 7201 Email:ycchen@niar.org.tw |
|
| TN90GUTM | TSMC 90 nm CMOS Mixed Signal MS General Purpose Standard Process LowK Cu 1P9M 1.0&3.3V (With UTM) |
Mr. Lin. Ext. 7190 Email:pjlin@niar.org.tw **Using Cell-Based Flow： Mr. Chen. Ext. 7159 Email:swchen@niar.org.tw |
|
| TN65GP | TSMC 65 nm CMOS Mixed Signal RF General Purpose Plus LowK Cu 1P9M 1.0&2.5V |
Mr. Lin. Ext. 7190 Email:pjlin@niar.org.tw **Using Cell-Based Flow： Mr. Lin. Ext. 7163 Email:cplin@niar.org.tw |
|
| TN40G | TSMC 45 nm CMOS LOGIC General Purpose Superb (40G) ELK Cu 1P10M 0.9/2.5V |
Mr. Ke. Ext. 7217 Email:clko@niar.org.tw **Using Cell-Based Flow： Mr. Chen. Ext. 7159 Email:swchen@niar.org.tw |
|
|
U18 U18MEMS |
UMC 0.18 um Mixed-Mode and RFCMOS 1.8V/3.3V 1P6M Metal Metal Capacitor Process |
Mr. Lin. Ext. 7190 Email:pjlin@niar.org.tw **Using U18MEMS post-processing： Mr. Wang. Ext. 7247 Email:nick.wang@niar.org.tw **Using Cell-Based Flow： Mr. Cheng. Ext. 7248 Email:shunwen.cheng@niar.org.tw |
|
| TN28HPCplu | TSMC 28 nm CMOS RF High Performance Compact Mobile Computing Plus ELK Cu 1P10M 0.9&1.8V |
Mr. Sha. Ext. 7135 Email:jrsha@niar.org.tw **Using Cell-Based Flow： Mr. Lin. Ext. 7163 Email:cplin@niar.org.tw |
|
| GaN12 | WIN 0.12um RF High Power GaN-on-SiC HEMT Technology |
Mr. Chen. Ext. 7201 Email:ycchen@niar.org.tw |
|
| IMEC-SiPh |
imec-ePIXfab SiPhotonics: iSiPP50G and imec-ePIXfab SiPhotonics: passives+
|
Mr. Lin. Ext. 7273 Email:mwlin@niar.org.tw |
|
| TN16FFC | TSMC 16 nm CMOS LOGIC FinFET Compact (Shrink) LL ELK Cu 1P13M 0.8/1.8V |
Mr. Sha. Ext. 7135 Email:jrsha@niar.org.tw **Using Cell-Based Flow： Mr. Lin. Ext. 7163 Email:cplin@niar.org.tw |
|
| T18HVG2 | TSMC 0.18UM CMOS HIGH VOLTAGE MIXED SIGNAL BASED GENERATION II BCD 1P6M SALICIDE AL_FSG 1.8/5/6/7/8/12/16 /20/24/29/36/45/55/65/70V/VG1.8/5V AND 5/6/7/8/12/16/20/24/29/36/45/55/65/70V/ VG5V |
Mr. Huang (Tainan Office) 06-2087971 Ext. 8215 Email: chiayihuang@niar.org.tw **Using Cell-Based Flow： Mr. Cheng. Ext. 7248 Email:shunwen.cheng@niar.org.tw |
|
| T50GaN | TSMC 0.50 UM GAN WBG E-HEMT USG AL 0P3M HKMG 650V |
Mr. Fang (Tainan Office) 06-2087971 Ext. 8108 Email:clfang@niar.org.tw |
|
Test Report to Submit
Contact
Ms. Yu, TEL：03-5773693 ext. 7219Email：hlyu@niar.org.tw