Integrated Materials Analysis Services
The Laboratory offers high-quality testing and analysis services as well as customized and integrated R&D for testing technologies and methods. In addition to the stand-alone service functions of major instruments, we also provide integrated analysis services and customized material testing and analysis services that deliver complete and fast analysis results. For collaborative partners, in particular, we offer integrated material assessment, testing and analysis services.
Dr./Team Leader Kun-Lin Lin
Ext.: 7531
E-mail: kllin@niar.org.tw
The analysis system covers the analysis of metal/semiconductor material interfaces as well as metal/ceramic materials and material precipitation. It integrates SEM, XRD, and TEM analysis to provide integrated analysis services that accurately determine and identify the crystal structure and composition of unknown precipitation and the preferred crystal growth direction in it.
Example 1: Ni/GaSb (Metal/semiconductor interfaces)
Example 2: Ti/ZrO2 (Metal/ceramic composite materials)
Links to relevant analysis technology articles:
Nanoscale spatially resolved electron excitation motions are used to analyze the physical and chemical properties of nanostructured materials and the novel materials developed for nanodevice processes and requirements, including their interface microstructure and roughness, dielectric functions, electron structures, energy band transitions, volume and surface plasmons, inner-shell electron ionization, and chemical bonding analysis. The related integrated analysis services include HRTEM crystal structure observation, STEM-HAADF atomic number contrast image analysis, STEM-EDS composition analysis, and STEM- EELS electron structure and chemical bonding analysis.
Example 1: Gate materials and the source/drain low-temperature silicide (NiSix) thin films developed for new processes in CMOS nanodevices
There are more or fewer residual stresses remaining in materials that are heated, stretched or rolled. Residual stresses are measured through X-ray diffraction. By taking different angles of incidence, the change in the distance between planes (d-spacing) is calculated using the angle of diffraction, thereby calculating the magnitude and gradient distribution of the residual stresses in thin film materials.
Example. XRD residual stress analysis - Polycrystalline silicon thin films (with an angle of incidence of 0.5 degree)
Integrated Material Analysis for the Academic Community and Industry
| Analysis Item |
|---|
| Material Interface Reaction Phase and Precipitation Phase Microstructure Identification Analysis |
| STEM-EELS Analysis Technology for Nanomaterials |
| Thin Film Work Function Analysis Technology |
| XRD Residual Stress Analysis |
Point of Contact
Dr./Team Leader Kun-Lin Lin
Ext.: 7531
E-mail: kllin@niar.org.tw
Analysis Item 1: Material Interface Reaction Phase and Precipitation Phase Microstructure Identification Analysis
The analysis system covers the analysis of metal/semiconductor material interfaces as well as metal/ceramic materials and material precipitation. It integrates SEM, XRD, and TEM analysis to provide integrated analysis services that accurately determine and identify the crystal structure and composition of unknown precipitation and the preferred crystal growth direction in it.
Example 1: Ni/GaSb (Metal/semiconductor interfaces)
Example 2: Ti/ZrO2 (Metal/ceramic composite materials)
Links to relevant analysis technology articles:
- “Phase Identification Using Series of Selected Area Diffraction Patterns and Energy Dispersive Spectrometry within TEM”, Microscopy Research, 2, 57-66 (2014).
- “Interfacial Characterization and Electrical Properties of Co/GaSb Contacts”, Materials Science Forum, 928, 215-220 (2018).
- “Phase-separation phenomenon of NiGePt alloy on n-Ge by microwave annealing”, Journal of Alloys and Compounds, 743 [30], 262-267, (2018).
Analysis Item 2: STEM-EELS Analysis Technology for Nanomaterials
Nanoscale spatially resolved electron excitation motions are used to analyze the physical and chemical properties of nanostructured materials and the novel materials developed for nanodevice processes and requirements, including their interface microstructure and roughness, dielectric functions, electron structures, energy band transitions, volume and surface plasmons, inner-shell electron ionization, and chemical bonding analysis. The related integrated analysis services include HRTEM crystal structure observation, STEM-HAADF atomic number contrast image analysis, STEM-EDS composition analysis, and STEM- EELS electron structure and chemical bonding analysis.
Example 1: Gate materials and the source/drain low-temperature silicide (NiSix) thin films developed for new processes in CMOS nanodevices
Analysis Item 3: Thin Film Work Function and Oxide Band Gap Analysis Technology
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Thin Film Work Function
- XPS is used to measure the work function of metal materials. Work function is defined as the threshold energy for electrons to be removed from atoms. Therefore, only when the work function is overcome can the release of produced photoelectrons from atoms be detected by instruments. This is shown in the following formula: E(BE)=hν-Ek-ψ. E(BE), hν, Ek, and ψ refer to binding energy, incident light intensity, photoelectron kinetic energy, and work function, respectively.
- Specimen conditions: Highly conductive thin films that are over 50 nm in thickness.
Example: Ge thin film work function measurement
-
Oxide Band Gap
- Oxide band gap can be derived from XPS O1s spectra based on the elastic peak and inelastic loss signals between the O1s spectra.
- Specimen conditions: Oxide thin films that are over 50 nm in thickness.
Example: ZrO oxide band gap measurement
Analysis Item 4: XRD Residual Stress Analysis
There are more or fewer residual stresses remaining in materials that are heated, stretched or rolled. Residual stresses are measured through X-ray diffraction. By taking different angles of incidence, the change in the distance between planes (d-spacing) is calculated using the angle of diffraction, thereby calculating the magnitude and gradient distribution of the residual stresses in thin film materials.
Example. XRD residual stress analysis - Polycrystalline silicon thin films (with an angle of incidence of 0.5 degree)