The present invention is a hydrogen ion-sensitive field effect transistor and a manufacturing method thereof. The hydrogen ion-sensitive field effect transistor includes a semiconductor substrate, an insulating layer, a transistor gate, and a sensing film layer. A gate area is defined on the semiconductor substrate having a source area and a drain area. The insulating layer is formed within the gate area on the semiconductor substrate. The transistor gate is disposed within the gate area and includes a first gate layer. The first gate layer is an aluminum layer, and a sensing window area is defined thereon. The sensing film layer is an alumina film layer formed within the sensing window area by oxidizing the first gate layer. Thus, the present invention can form a sensing film without any additional film deposition process, and consequently the manufacturing method can be simplified.

• Country: United States
• Patent No.: 8466521B2Download