A fully CMOS-compatible MEMS multi-project wafer process. The process comprises coating a layer of thick photoresist on a wafer surface, patterning the photoresist to define a micromachining region, and performing micromachining in the micromachining region to form suspended microstructures.

• Country: United States
• Patent No.: 7435612B2Download

• Country: Republic of China
• Patent No.: I293787Download