The present invention is a gas sensor structure comprising a gas sensor chip. The back of the sensing material of the chip is a hollow structure. An insulating layer is disposed below the sensing material. A micro-heater is disposed around the sensing material. The sensing material adheres to sensing electrodes. The sensing material includes two metal oxide semiconductors or a complex structure of the sensing layer having a metal oxide semiconductor and a reaction layer with a rough surface. An interface layer is sandwiched between the two metal oxides to increase the gas sensing efficiency of the present invention. Through the gas sensor structure provided by the present invention, a suspended gas sensing structure can be fabricated on a silicon substrate and the chip size can be minimized.

• Country: United States
• Patent No.: US10656129B2Download

• Country: China
• Patent No.: CN110887873BDownload

• Country: Republic of China
• Patent No.: I706571Download